PHOTOELECTRICAL PROPERTIES OF AU GAAS(1-X)SX/MO STRUCTURES AS A FUNCTION OF SULFUR CONCENTRATION/

In this paper we present results of a study of the influence of sulfur on the photoelectrical properties of experimental Au/GaAs(1-x)Sx/Mo s tructures. The GaAs(1-x)Sx polycrystalline layer was deposited by radi o frequency sputtering in a mixed argon and hydrogen sulfide gas. The open-circuit voltage (V(oc)), the short-circuit current (I(sc)) under a given illumination have been measured as a function of the molar fra ction x from 0 to 0.26. For the Au/GaAs(1-x)Sx/Mo structure the diminu tion in interface state activity with the increase of x corresponds to an improvement of the open-circuit voltage and is limited by the incr ease of bulk and ohmic contact resistance. A variation of sulfur conce ntration at the back contact shows the good interface properties of th e GaAs(1-x)Sx compound.