SPATIALLY TRANSIENT HOT-ELECTRON DISTRIBUTIONS IN SILICON DETERMINED FROM THE CHAMBERS PATH-INTEGRAL SOLUTION OF THE BOLTZMANN TRANSPORT-EQUATION

A new technique is presented for determining the spatially transient h ot electron distribution function in silicon. The Boltzmann transport equation is solved deterministically using a modification of the Chamb ers path integral solution. This formulation is shown to be relatively simple to implement, retains all essential physics and avoids the use of Legendre polynomial expansions. The accuracy of the technique is c onfirmed by comparison with Monte Carlo simulations. This method is co mputationally very efficient and should find applications in the study of hot carrier effects in silicon.