Ccc. Leung et Pa. Childs, SPATIALLY TRANSIENT HOT-ELECTRON DISTRIBUTIONS IN SILICON DETERMINED FROM THE CHAMBERS PATH-INTEGRAL SOLUTION OF THE BOLTZMANN TRANSPORT-EQUATION, Solid-state electronics, 36(7), 1993, pp. 1001-1006
A new technique is presented for determining the spatially transient h
ot electron distribution function in silicon. The Boltzmann transport
equation is solved deterministically using a modification of the Chamb
ers path integral solution. This formulation is shown to be relatively
simple to implement, retains all essential physics and avoids the use
of Legendre polynomial expansions. The accuracy of the technique is c
onfirmed by comparison with Monte Carlo simulations. This method is co
mputationally very efficient and should find applications in the study
of hot carrier effects in silicon.