CONSERVATION EQUATIONS FOR HOT CARRIERS .1. TRANSPORT MODELS

Kinetic and hydrodynamic models for simulation of carrier heating and transport in bulk semiconductors and semiconductor devices are conside red. In the framework of the kinetic approach based on the single-part icle Monte Carlo simulation main attention is paid to the hydrodynamic model parameters as well as to the time- and frequency-dependences of the hot carrier linear response calculations. In the framework of the hydrodynamic approach the drift velocity and mean energy conservation equations are investigated under the single electron gas approximatio n. Possible extensions as well as widely used simplifications of this model such as the energy transport model, the local energy model, the extended drift-diffusion formalism and the drift-diffusion approximati on are considered.