EXPERIMENTAL APPLICATION OF A NOVEL TECHNIQUE TO EXTRACT GATE BIAS DEPENDENT SOURCE AND DRAIN PARASITIC RESISTANCES OF GAAS-MESFETS

Authors
MENOZZI R COVA P SELMI L
Citation
R. Menozzi et al., EXPERIMENTAL APPLICATION OF A NOVEL TECHNIQUE TO EXTRACT GATE BIAS DEPENDENT SOURCE AND DRAIN PARASITIC RESISTANCES OF GAAS-MESFETS, Solid-state electronics, 36(7), 1993, pp. 1083-1084
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
36
Issue
7
Year of publication
1993
Pages
1083 - 1084
Database
ISI
SICI code
0038-1101(1993)36:7<1083:EAOANT>2.0.ZU;2-D