STUDY OF INGAAS GAAS METAL-INSULATOR-SEMICONDUCTOR-LIKE HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR/

In this paper, we will investigate a metal-insulator-semiconductor (MI S) like InGaAs/GaAs doped-channel structure, both in theoretical analy sis and experiment. First, a charge control model is employed to simul ate the basic electronic properties of the doped-channel field-effect transistor (FET). Then, a practical device is fabricated and processed . From the results, we can find that the device shows good transistor characteristics. A high breakdown voltage of 17.4 V, a maximum drain s aturation current of 930 mA mm(-1), a maximum transconductance of 235 mS mm(-1), and a very broad gate voltage swing larger than 3 V with th e transconductance higher than 200 mS mm(-1) are obtained for a 2 x 10 0 mu m(2) gate-dimension FET. From the comparison, we find that the ex periments are in good agreement with the theoretical simulations. The performances provide a promise of the proposed device to be a good can didate for practical circuit applications.