PB P-PBSE JUNCTION - AN INVESTIGATION OF CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE MEASUREMENTS/

Molecular beam epitaxy has been used to grow p-PbSe/CaF2/Si(111) heter ostructures. Using such stuctures, which are fully compatible with sta ndard photolithographic technological procedures, photovoltaic sensors have been realized. The I(V) characteristics of the Pb/p-PbSe contact s have been investigated experimentally and theoretically over a wide temperature range from 4 to 300 K. Evidence of the contribution of bul k and surface impurity concentrations in the space charge region at hi gh temperature is presented. The Schottky barrier height has been deri ved from a fit to the experimental data. We used the theory of Padovan i and Stratton in the context of Fermi-Dirac statistics. In addition t he capacitance-voltage characteristics of Pb/p-PbSe diodes have been i nvestigated. The Schottky barrier height has been obtained and the exi stence of an inversion layer at the surface of p-type PbSe layer has b een demonstrated.