MOS-GATED OPTICALLY TRIGGERED THYRISTOR - A NEW GALVANICALLY INSULATED HIGH-VOLTAGE INTEGRATED SWITCH

Citation
R. Berriane et al., MOS-GATED OPTICALLY TRIGGERED THYRISTOR - A NEW GALVANICALLY INSULATED HIGH-VOLTAGE INTEGRATED SWITCH, Solid-state electronics, 39(6), 1996, pp. 863-869
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
39
Issue
6
Year of publication
1996
Pages
863 - 869
Database
ISI
SICI code
0038-1101(1996)39:6<863:MOTT-A>2.0.ZU;2-J
Abstract
A new high voltage power switch integrating the detection, amplificati on and validation of an optical drive guaranteeing a good galvanic ins ulation has been developed. This device integrates a MOS-gated thyrist or, a photodiode, a Zener diode and a depletion mode MOSFET. Unlike co nventional optothyristors, the photocurrent is not directly used to tr igger the thyristor, but charges the MOS gate of the device. The power needed for triggering should then be reduced. This paper describes th e structure and the electrical behaviour of this new integrated device and also provides information about process how and the design of the devices.