R. Berriane et al., MOS-GATED OPTICALLY TRIGGERED THYRISTOR - A NEW GALVANICALLY INSULATED HIGH-VOLTAGE INTEGRATED SWITCH, Solid-state electronics, 39(6), 1996, pp. 863-869
A new high voltage power switch integrating the detection, amplificati
on and validation of an optical drive guaranteeing a good galvanic ins
ulation has been developed. This device integrates a MOS-gated thyrist
or, a photodiode, a Zener diode and a depletion mode MOSFET. Unlike co
nventional optothyristors, the photocurrent is not directly used to tr
igger the thyristor, but charges the MOS gate of the device. The power
needed for triggering should then be reduced. This paper describes th
e structure and the electrical behaviour of this new integrated device
and also provides information about process how and the design of the
devices.