THE SHOCKLEY-HAYNES EXPERIMENT APPLIED TO MOS STRUCTURES

The Shockley-Haynes experiment has been applied to MOS structures. The design of these MOS test devices and their physical properties which emerge from application of the measurement technique are discussed. Us ing the gate voltage accumulation regime, surface recombination is not effective and pure bulk values of the minority carrier mobility mu, t he diffusion coefficient D, and the lifetime tau are determined. To fa cilitate the execution of the experiment the mathematical description of the two-dimensional transient measurement procedures is kept simple . For this reason emphasis has been placed on the choice of suitable m easurement conditions. Furthermore, the different functional parts of the measurement equipment have to meet specific requirements correspon ding to the use of MOS structures. Problems which were neglected in a previous paper are addressed. These problems are here taken into accou nt in a dedicated evaluation strategy. In this the initial base of the experiment remains unchanged. Finally the proposed evaluation scheme is applied to a set of measurements.