OPTIMIZATION STUDY OF HALO DOPED MOSFETS

In this work, the hot carrier degradation behavior of the halo doped M OSFETs is investigated and an optimized halo design, taking into accou nt the hot carrier reliability, is proposed. Conventional LDD MOSFETs and halo MOSFETs with the variations in LDD n - dose and halo dose are fabricated. The degradations of the threshold voltage and the drain s aturation current under hot carrier stress (DAHC and CHC) conditions a re measured and analyzed. Device simulations are also carried out to c over a wider range than the experiments. In order to obtain the improv ed device characteristics in hot carrier effects as well as short chan nel effects, the halo design should be carefully optimized.