ELECTRONIC AND VIBRATIONAL-SPECTRA OF INP QUANTUM-DOT FORMED BY SEQUENTIAL ION-IMPLANTATION

Sequential ion implantation of indium and phosphorus into silica combi ned with controlled thermal annealing has proven to be a novel and eff ective technique to fabricate InP quantum dots in dielectric hosts. Th is technique has been applied to synthesize other III-V and II-VI quan tum dots. Due to the unique bimodal distribution of the indium in a si lica host and a stoichiometric mismatch between the indium and phospho rus concentration profiles, it is believed that two different-sized In P quantum dots were fabricated. More importantly, we have shown that t he infrared reflectance technique is a very effective method to identi fy the species in the dielectric host and is also a powerful tool to i nvestigate surface phonon modes. (C) 1994 American Vacuum Society.