MOLECULAR-DYNAMICS SIMULATION OF MULTILAYER HOMOEPITAXIAL DEPOSITION ON FACE-CENTERED-CUBIC(100) METAL-SURFACES

Two features are observed to be important in the homoepitaxial deposit ion of 50 monolayers on Pd(100) and Cu(100) at 80 K. First, a fourfold hollow site that is missing one or more of its four supporting atoms on the surface (i.e., an overhang site) can be stable. This increases the surface roughness by allowing defects in the growing surface. Seco nd, multiatom rearrangements occur during growth. These events decreas e the local surface roughness by filling deep holes in the surface. Ne ither of these two features is included in currently used kinetic grow th models. (C) 1996 American Vacuum Society.