NOVEL SCHEME TO FABRICATE SIGE NANOWIRES USING PULSED ULTRAVIOLET-LASER INDUCED EPITAXY

A novel scheme is employed to fabricate SiGe nanowires in a Si(100) su bstrate using pulsed ultraviolet (UV) laser induced epitaxy. In partic ular, Si(100) substrates are patterned with arrays of Ge wires similar to 60 nm in width and similar to 6 nm in thickness. A thin film low t emperature silicon oxide is then deposited on the substrate. Sice nano wires with a cross section of similar to 25x95 nm(2) are formed using pulsed UV laser induced epitaxy. The structures are analyzed using sca nning electron microscopy and cross-sectional transmission electron mi croscopy. Potential applications of the wire structure include base fo rmation in a lateral SiGe heterojunction bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip. (C) 1 996 American Vacuum Society.