MORPHOLOGY AND GROWTH MODE OF AL FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION FROM DIMETHYLETHYLAMINE ALANE ON GAAS(001)2X4 SURFACES

Authors
VENKATESWARAN N KARPOV I GLADFELTER W FRANCIOSI A
Citation
N. Venkateswaran et al., MORPHOLOGY AND GROWTH MODE OF AL FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION FROM DIMETHYLETHYLAMINE ALANE ON GAAS(001)2X4 SURFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1949-1956
Citations number
39
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
14
Issue
3
Year of publication
1996
Part
2
Pages
1949 - 1956
Database
ISI
SICI code
0734-2101(1996)14:3<1949:MAGMOA>2.0.ZU;2-6
Abstract
We investigated the initial stages of growth of Al films fabricated by chemical vapor deposition at 100 degrees C on GaAs(001)2x4 surfaces u sing the molecular precursor dimethylethylamine alane. In situ reflect ion high energy electron diffraction and scanning tunneling microscopy and spectroscopy, as well as ex situ atomic and lateral force microsc opy, were employed for morphological analysis. Film growth was found t o occur in the Volmer-Weber mode and involve islands with remarkably l ow z-aspect ratio (similar to 1.16). Scanning tunneling spectroscopy d ata on some of these islands in the early stages of growth suggest the formation of an AlAs interface phase. (C) 1996 American Vacuum Societ y.