ELECTRICAL CHARACTERIZATION OF PT SRBI2TA2O9/PT CAPACITORS FABRICATEDBY THE PULSED-LASER ABLATED DEPOSITION TECHNIQUE/

Authors
LEE JK JUNG HJ AUCIELLO O KINGON AI
Citation
Jk. Lee et al., ELECTRICAL CHARACTERIZATION OF PT SRBI2TA2O9/PT CAPACITORS FABRICATEDBY THE PULSED-LASER ABLATED DEPOSITION TECHNIQUE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 900-904
Citations number
12
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
14
Issue
3
Year of publication
1996
Part
1
Pages
900 - 904
Database
ISI
SICI code
0734-2101(1996)14:3<900:ECOPSC>2.0.ZU;2-U
Abstract
Pulsed laser ablation deposition was used to synthesize polycrystallin e SrBi2Ta2O9 layered ferroelectric thin films on the platinized silico n substrate. The surface roughness of the deposited film was an averag e of 4 nm. The titanium element was diffused to the SrBi2Ta2O9 layer t hrough the platinum layer. P-E hysteresis loop for the Pt/SrBi2Ta2O9/P t/Ti capacitor was well saturated and symmetric (P-r = 3 mu C/cm(2), E (c) = 25 kV/cm). (C) 1996 American Vacuum Society.