SOLID-PHASE EPITAXY OF BETA-FESI2 ON SI(100)

Orthorhombic beta-FeSi2 is a semiconducting material with a direct ban d gap of about 0.87 eV, which makes it an active component in light de tectors and near-infrared sources. Solid phase epitaxy (SPE) has been used as the conventional method to grow epitaxial beta-FeSi2 films. In this article. we report on the SPE of beta-FeSi2 films using Fe/Si(10 0) heterostructures obtained by metalorganic chemical vapor deposition (MOCVD). The formation processing of the beta-FeSi2, thin films inclu des the deposition of iron on Si(100) by MOCVD and a subsequent anneal ing. The highly textured Fe layer deposited on the silicon substrate w as tested by x-ray diffraction (XRD) and electron microscopy technique s. The beta-FeSi2 film was successfully formed after the annealing pro cess. The better epitaxy of beta-FeSi2, on Si(100) was evidenced by XR D measurements. It was also confirmed by Raman spectra measurements, i n which some main Raman lines were clearly detected. Optical transmiss ion measurements revealed a strong absorption of beta-FeSi2, near 0.87 eV. (C) 1996 American Vacuum Society.