Hs. Kim et al., STUDY OF RADIATION-DAMAGE AND CONTAMINATION BY MAGNETIZED INDUCTIVELY-COUPLED PLASMA-ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1062-1066
Citations number
15
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Radiation damage and contamination on the silicon surfaces etched by m
agnetized inductively coupled C4F8 plasmas were investigated. X-ray ph
otoelectron spectroscopy (XPS), secondary ion mass spectrometry, spect
roscopic ellipsometry, and transmission electron microscopy were used
to characterize contamination and high resolution transmission electro
n microscopy, and I-V characteristics of Schottky diodes fabricated on
the etched and/or annealed silicon surface were used to evaluate radi
ation damage. As the magnetic field applied to the inductively coupled
plasmas increased from 0 to 12 G, the thickness of the residue layer
formed on the silicon surface increased with the increase of SiO2 etch
rate and selectivity. XPS analysis showed that the composition of the
residue layer changed from fluorine rich to carbon rich film by chang
ing the carbon binding state from C-CFx to C-C. Dense defects distribu
ted about 40 Angstrom deep from the etched silicon surface were found
for the 0 G condition and thicker but less dense defects were observed
for higher magnetic field conditions. The electrical damage estimated
from the I-V characteristics of Schottky diodes was reduced with incr
easing applied magnetic field strength. (C) 1996 American Vacuum Socie
ty.