IN-SITU BORON DOPING OF SI AND SI1-XGEX EPITAXIAL LAYERS BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION

We report on the growth of in situ boron doped Si and Si1-xGex epitaxi al layers at 510 degrees C by ultrahigh vacuum electron cyclotron reso nance chemical vapor deposition. Boron concentration increases with B2 H6 partial pressure. The boron concentration decreases as microwave po wer increases in Si epilayers and as Ge fraction increases in Si1-xGex epilayers. Enhanced ion bombardment at these conditions promotes the desorption of boron hydride in the growth surface. No growth rate chan ge is observed in the Si epilayer with B2H6 partial pressure. However, a significant growth rate decrease is observed for the Si1-xGex epila yer with B2H6 partial pressure. (C) 1996 American Vacuum Society.