Mi. Current, ION-IMPLANTATION FOR SILICON DEVICE MANUFACTURING - A VACUUM PERSPECTIVE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1115-1123
Citations number
36
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Ion implantation systems rely on a diverse vacuum environment to accom
plish the goals of doping of Si materials for formation of electronic
devices. Failure to manage the gas hows and contaminants in this compl
ex vacuum system can lead to severe penalties for integrated circuit p
rocessing. Examples of vacuum control issues in ion sources, beam tran
sport, dosimetry, wafer charging, and contamination are discussed. Con
tamination issues involve a mix of ion and vapor transport of dopants
and metals, charge exchange and molecular breakup collisions, and part
icle generation associated with electrode arcing. Additional factors i
n good vacuum design include operation of contamination-free, rapid-cy
cle loadlocks and safety issues, such as management of potentially exp
losive gas mixtures during regeneration of cryopumps. (C) 1996 America
n Vacuum Society.