DRY DEVELOPMENT OF SUB-0.25 MU-M FEATURES PATTERNED WITH 193 NM SILYLATION RESIST

The dry development of sub-0.25 mu m silylated resist features pattern ed at 193 nm was optimized in an oxygen plasma using a high-ion-densit y plasma etcher. Low pressure and low wafer temperature eliminate late ral resist lass, resulting in vertical profiles, linewidth fidelity, a nd large process latitudes for 0.175 mu m silylated resist features. ( C) 1996 American Vacuum Society.