3-DIMENSIONAL EQUIPMENT MODELING FOR CHEMICAL-VAPOR-DEPOSITION

Three-dimensional (3D) numerical equipment modeling using the simulato r PHOENICS-CVD was used to investigate a low pressure chemical vapor d eposition process for boron and phosphorus doped silicon glass deposit ion from TEOS, PH3, O-2, and TEE gas sources. The simulation allows th e 3D visualization of gas flow, temperature, and chemical concentratio n profiles in the reactor, as well as the calculation of the depositio n rate as a function of position. Mixing of gases from different inlet s and deposition uniformity due to reactive gas depletion were studied as a function of pressure, gas flow velocity, and reactor geometry. C omparison with experimental deposition rate data shows that published chemical models can well describe the undoped deposition, while additi onal chemical reactions seem to become important when PH3 is introduce d in the reactor for phosphorus doped glass deposition. (C) 1996 Ameri can Vacuum Society.