ULTRAFINE SILICON QUANTUM WIRES FABRICATED BY SELECTIVE CHEMICAL ETCHING AND THERMAL-OXIDATION

Combining SiGe/Si heteroepitaxy, selective chemical etching, and subse quent thermal oxidation, we have successfully fabricated ultrafine sil icon quantum wires (SQWRs) with Si/SiO2 interfaces. Experimental resul t shows that the present method provides a very controllable way to fa bricate ultrafine SQWRs, that is completely compatible with silicon mi croelectronic technology. As one of the key processes of controlling t he lateral dimensions of SQWRs, wet oxidation of silicon wires have be en investigated. It is found that a self-limiting oxidation phenomenon of silicon wires occurs for wet oxidation. This oxidation retardation characteristic of silicon wires is discussed. (C) 1996 American Vacuu m Society.