THE LOW-FREQUENCY NOISE BEHAVIOR OF SILICON-ON-INSULATOR TECHNOLOGIES

In this overview, the low-frequency noise behaviour of devices fabrica ted in silicon-on-insulator technologies is described. The different p otential noise sources are analysed and illustrated by experimental re sults, mainly obtained on MOSFETs. Some SOI-specific noise behaviour i s highlighted, as for instance the kink-related excess low-frequency n oise overshoot. It is shown furthermore that SOI MOSFETs suffer from s o-called random telegraph signals, which can originate from the front- or the back-gate dielectric, or from defects located in the thin Si a ctive layer. The impact of the substrate type (SIMOX, bonded, ZMR,...) is discussed. At the same time, it is shown that the used technology and device structure can have a pronounced effect on the LF noise perf ormance. Finally, the response of SOI MOSFETs on ionizing radiation (y s, X-rays,...) is studied through the LF noise degradation, in view of radiation-hardened applications. Copyright (C) 1996 Elsevier Science Ltd.