CARRIER TRANSPORT SIMULATION FOR BULK ALXGA1-XAS WITH A GAMMA-L-X BAND-STRUCTURE BASED ON LEI-TING BALANCE-EQUATIONS

With the help of the Lei-Ting balance equations for multi-valley semic onductors, a detailed calculation of steady-state hot-electron transpo rt in bulk AlxGa1-xAs with a Gamma-L-X band structure has been carried out for various compositions and lattice temperatures. We introduce d ifferent drift velocity, electron temperature and Fermi energy level ( or electron density) for the Gamma, L and X valleys. The calculated re sults for drift velocity as a function of the applied electric field s how good agreement with those obtained from Monte Carlo simulation. Th e role of different scattering mechanisms, which affect the negative d ifferential mobility characteristics is also discussed. It is indicate d that the Lei-Ting method is a very convenient and effective tool for studying the transport behaviour of carriers in semiconductors. Copyr ight (C) 1996 Elsevier Science Ltd.