MODELING OF HOT-CARRIER STRESSED CHARACTERISTICS OF SUBMICROMETER PMOSFETS

In a pMOSFET, trapped electrons in the gate oxide due to hot-carrier s tress reduce the effective channel length by inverting the surface fro m an n-type surface to a p-type surface and extend the p drain region. To describe the channel shortening, this paper presents a new analyti cal, physics-based I-V model for hot-electron damaged submicrometer p- type MOSFETs. The model was developed based on a pseudo-two-dimensiona l approach, it incorporates the effect of the spatial distribution of trapped electrons and can be used to calculate the degraded channel el ectric field and potential distribution. The model can also describe t he time-dependence of degraded drain current with stress time. Copyrig ht (C) 1996 Elsevier Science Ltd.