CuGaTe2 thin films were prepared by the flash evaporation technique. T
he influence of substrate temperature (T-s) on the electrical characte
ristics was studied. The films formed at T-s = 523-573 K were polycrys
talline, single phase and nearly stoichiometric. The films of 0.7 mu m
thickness showed an electrical resistivity of about 10(-2) Omega cm,
a mobility of 55 cm(2) V-1 s(-1) with a carrier concentration of 1.5 x
10(19) cm(-3). The electrical resistivity was found to decrease with
film thickness, whereas the mobility increased. The activation energie
s were also determined in the temperature range 300-575 K.