STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF TIO2 GROWN FROM TITANIUM TETRAKIS-ISOPROPOXIDE (TTIP) AND TTIP H2O AMBIENTS/

Thin films of TiO2 have been deposited on silicon wafers from titanium tetrakis-isopropoxide (TTIP) and TTIP/H2O using low pressure metalorg anic chemical vapor deposition. The films have been characterized by R utherford backscattering spectrometry, forward recoil spectrometry, x- ray diffraction, and electrical techniques. Dielectric constants of ap proximately 30 were measured by high frequency C-V. Metal-oxide-semico nductor capacitors were fabricated using sputtered platinum as the upp er electrode material. Films deposited in the presence of water vapor had a much lower quality interface with the silicon substrate. Normal thermionic emission was observed when the gate electrode was positivel y biased and barrier heights were extracted. Dramatically reduced leak age currents and increased barrier heights were seen after 750 degrees C anneals in dry oxygen. Using a ramped voltage test, capacitors were found to break down at applied fields of 3.0 MV/cm. (C) 1996 American Vacuum Society.