F. Ren et al., BCL3 N-2 DRY-ETCHING OF INP, INALP, AND INGAP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1758-1763
Etch rates for InP, InAlP, and InGaP can be controlled between similar
to 1500 Angstrom/min and >1 mu m/min by varying the microwave power,
rf power, or N-2 composition in BCl3N2 discharges under electron cyclo
tron resonance conditions. The surface morphology of InGaP is poor at
low microwave power (250 W), but becomes very smooth at high powers (1
000 W). InP has exactly the opposite dependence on microwave power, wh
ile InAlP shows little change in morphology over a wide range of power
s. The high ion current under electron cyclotron resonance conditions
enables etching of In-based semiconductors without the need for high s
ample temperatures to enhance desorption of InClX species. (C) 1996 Am
erican Vacuum Society.