Sq. Wang et al., STEP COVERAGE COMPARISON OF TI TIN DEPOSITED BY COLLIMATED AND UNCOLLIMATED PHYSICAL VAPOR-DEPOSITION TECHNIQUES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1846-1852
The step coverage and grain structure of Ti/TiN films sputtered with a
nd without a collimator in a contact/via hole structure were compared
using transmission electron microscopy, microelectron diffraction, and
Auger electron spectroscopy with field emission microanalysis capabil
ity on cross-section samples. ?The holes have widths ranging from 0.40
to 0.75 mu m and aspect ratios from 2.3 to 1.4, respectively. It was
found that collimated Ti/TiN films demonstrate reasonably uniform cove
rage along the sidewall and at the bottom of hole. Collimated Ti botto
m coverage is sufficient to assure good contact resistance. In contras
t, uncollimated Ti/TiN films demonstrate an overhang on the top sidewa
ll of holes and show decreased coverage when approaching the bottom co
rner along the sidewall or along the bottom of holes. Film property di
fferences at different regions of a hole using either collimated or un
collimated deposition techniques will also be discussed. (C) 1996 Amer
ican Vacuum Society.