CALCULATION OF ETCHING PROFILE IN THE PHOTOLITHOGRAPHIC PROCESS ON AS2S3 THIN-FILMS

Authors
MAMEDOV S KISLIUK A
Citation
S. Mamedov et A. Kisliuk, CALCULATION OF ETCHING PROFILE IN THE PHOTOLITHOGRAPHIC PROCESS ON AS2S3 THIN-FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1864-1866
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
3
Year of publication
1996
Pages
1864 - 1866
Database
ISI
SICI code
1071-1023(1996)14:3<1864:COEPIT>2.0.ZU;2-I
Abstract
The model of the formation etching profile in the photolithographic pr ocess on the As2S3 thin films has been proposed. Using experimental de pendence of dissolution rate versus exposure the evolution of the etch ing profile was calculated. The model allows one to predict the etchin g profile and simulates the process. (C) 1996 American Vacuum Society.