POROUS SILICON FIELD-EMISSION CATHODE DEVELOPMENT

This article will address the development of a porous silicon cathode technology which shows promise in solving the existing problems, speci fically unstable, low current density, nonreproducible and high voltag e emission, encountered by other cathode technologies. Monolithic two- and three-terminal devices have been designed, manufactured, and char acterized. All of these devices have resulted in stable, reproducible operating characteristics that follow the Fowler-Nordheim model. Vacuu m transport of the electrons and temperature independence (to 250 degr ees C) of the current-voltage characteristics have been confirmed. App reciable emission current has been observed with macroscopic fields on the order of 10(4) V/cm, thus indicating a large submicroscopic field enhancement due to the geometrical nature of the porous silicon. (C) 1996 American Vacuum Society.