ELECTROSTATIC ANALYSIS OF FIELD-EMISSION TRIODE WITH VOLCANO-TYPE GATE

More researchers have recently paid much attention to the fabrication of field emission triode with a volcano-type gate on the silicon subst rate because of their ease of fabrication and low cost. In this articl e, five different structures of this triode are presented. The electri c field on the tip of field emitter (E(tip)) is calculated for these s tructures by using the EMAS software, and the different potential dist ribution and electric field distribution are obtained from these calcu lations. The results show that the diameter of the gate hole is import ant in determining E(tip) for this triode, Because the volcano-type ga te holes fabricated by wet or dry etching have a very sharp rim, when the distance between anode and gate is small, a high electric field mo re than 1x10(7) V/cm is formed on the rim of gate hole at the given ga te voltage V-g and anode voltage V-a. (C) 1996 American Vacuum Society .