Km. Chen et al., NEW INSIGHTS INTO THE KINETICS OF THE STRESS-DRIVEN 2-DIMENSIONAL TO 3-DIMENSIONAL TRANSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2199-2202
We have systematically investigated the morphological evolution of Ge0
.5Si0.5 strained films during postdeposition annealing. The changes of
the surface structure are found to follow the kinetic route of strain
relaxation at different stages. A number of interesting features are
revealed, which include the existence of an energy barrier to the two-
dimensional/three-dimensional (2D/3D) transition, and a self-limiting
effect in the growth kinetics of strained 3D islands. We demonstrate t
hat the annealing approach provides a new way to grow coherent islands
with uniform size. (C) 1996 American Vacuum Society.