MOLECULAR-BEAM EPITAXY GROWTH OF INGAP MULTIPLE-QUANTUM-WELL STRUCTURES ON GAP FOR OPTICAL MODULATORS

Authors
VOGT TJ THIAGARAJAN P ROBINSON GY
Citation
Tj. Vogt et al., MOLECULAR-BEAM EPITAXY GROWTH OF INGAP MULTIPLE-QUANTUM-WELL STRUCTURES ON GAP FOR OPTICAL MODULATORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2248-2251
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
3
Year of publication
1996
Pages
2248 - 2251
Database
ISI
SICI code
1071-1023(1996)14:3<2248:MEGOIM>2.0.ZU;2-S
Abstract
The epitaxial growth and characterization of multiple quantum well (MQ W) optical modulators on GaP substrates is reported. The devices were fabricated using graded composition InGaP strain relieving buffer laye rs and strain-compensated InGaP MQWs. The devices operate in the 570-6 20 nm wavelength range with a maximum transmission change of 15% occur ring at 594 nm for an applied bias of -10 V. The composition range req uired for the target wavelength range is near the indirect-direct cros sover point for the InGaP material system and the corresponding effect s on photoluminescence and absorption data is presented. (C) 1996 Amer ican Vacuum Society.