II-VI BLUE GREEN LASER-DIODES ON ZNSE SUBSTRATES/

This article reports the first blue/green laser diodes grown on ZnSe s ubstrates. The laser structure employed is a p-on-n separate confineme nt heterostructure consisting of 0.8-mu m-thick ZnMgSSe cladding layer s lattice-matched to ZnSe, 0.1-mu m-thick ZnSe light guiding layers, a nd a single 60-200-Angstrom-thick ZnCdSe quantum well. Green laser emi ssion (507-517 nm; 2.443-2.394 eV) was observed at temperatures from 7 7-220 K using cw excitation at 77 K and pulsed excitation (50 ns; 10(- 1)-10(-4) duty cycle) at higher temperatures. Blue laser diodes with o utputs at 485 nm (2.553 eV) at 77 K have also been fabricated and test ed. (C) 1996 American Vacuum Society.