MOLECULAR-BEAM EPITAXY GROWTH OF STRONTIUM THIOGALLATE

The molecular-beam epitaxy growth and characterization of cerium doped strontium thiogallate (SrGa2S4:Ce) thin film phosphors are reported. The layers were grown on GaAs, and glass/indium tin oxide/dielectric s tack substrates for device fabrication. Ga2S3/Sr beam equivalent press ure ratios of 20-100 and CeCl3/Sr flux (molecules cm(-2) s(-1)) ratios of 1/20-1110 were investigated in this study. The substrate temperatu re was varied between 530 and 575 degrees C. A typical SrGa2S4:Ce film growth rate of 0.5 mu m/h was obtained with Sr, Ga2S3, and CeCl3 beam equivalent pressures of 2.0 x 10(-7), 1.0 x 10(-5), and 3.5 x 10(-8) Torr, respectively. Characterization of the layers' structural and opt ical properties by x-ray diffraction, transmission electron microscopy , energy dispersive x-ray spectroscopy, and photoluminescence spectros copy is presented. (C) 1996 American Vacuum Society.