STUDY OF INTERFACE ABRUPTNESS OF MOLECULAR-BEAM EPITAXIAL GAAS ALAS SUPERLATTICES GROWN ON GAAS(311) AND (100) SUBSTRATES/

Authors
HSU Y WANG WI KUAN TS
Citation
Y. Hsu et al., STUDY OF INTERFACE ABRUPTNESS OF MOLECULAR-BEAM EPITAXIAL GAAS ALAS SUPERLATTICES GROWN ON GAAS(311) AND (100) SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2286-2289
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
3
Year of publication
1996
Pages
2286 - 2289
Database
ISI
SICI code
1071-1023(1996)14:3<2286:SOIAOM>2.0.ZU;2-G
Abstract
Molecular beam epitaxial GaAs/AlAs superlattices were grown on GaAs (3 11)A, (311)B, and (100) substrates at 600 degrees C. High resolution x -ray diffraction and transmission electron microscopy were employed to characterize the interface abruptness and the crystallinity of the su perlattices. The high resolution x-ray diffraction results show a simi lar crystalline quality in both the (100) and (311) superlattices. A d etailed analysis by transmission electron microscopy further reveals t hat superior interface profiles are achieved in the (311) superlattice . The observed inferior interface profile in the (100) orientation is most likely attributable to the meandering of steps during crystal gro wth. (C) 1996 American Vacuum Society.