LOW INTERFACE STATE DENSITY OXIDE-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY

Authors
HONG M PASSLACK M MANNAERTS JP KWO J CHU SNG MORIYA N HOU SY FRATELLO VJ
Citation
M. Hong et al., LOW INTERFACE STATE DENSITY OXIDE-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2297-2300
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
3
Year of publication
1996
Pages
2297 - 2300
Database
ISI
SICI code
1071-1023(1996)14:3<2297:LISDOS>2.0.ZU;2-0
Abstract
Several oxide-GaAs heterostructures were fabricated using in situ mult iple-chamber molecular beam epitaxy. The oxides include SiO2, MgO, and Ga2O3(Gd2O3), all evaporated by an electron beam method. The SiO2 and Ga2O3(Gd2O3) films are amorphous while the MgO films are crystalline and part of the films are epitaxially grown on GaAs(100). Among these heterostructures, the Ga2O3(Gd2O3)-GaAs shows a photoluminescence inte nsity comparable to that of Al0.45Ga0.55As-GaAs, and forms accumulatio n and inversion layers as measured from capacitance voltage measuremen t in quasistatic and high frequency modes. (C) 1996 American Vacuum So ciety.