X-VALLEY RELATED LUMINESCENCE FROM ALAS (AL,GA) AS QUANTUM-WELL STRUCTURES GROWN ON (112)B GAAS SUBSTRATES/

Authors
HENDERSON RH TOWE E
Citation
Rh. Henderson et E. Towe, X-VALLEY RELATED LUMINESCENCE FROM ALAS (AL,GA) AS QUANTUM-WELL STRUCTURES GROWN ON (112)B GAAS SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2309-2311
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
3
Year of publication
1996
Pages
2309 - 2311
Database
ISI
SICI code
1071-1023(1996)14:3<2309:XRLFA(>2.0.ZU;2-D
Abstract
We report X-valley related photoluminescence emission from AlAs/Al0.44 Ga0.56As multiple quantum well structures grown on (112)B GaAs substra tes. The low temperature (100 K) spectra of these structures exhibit t wo distinct emission peaks. One peak, located at 2.049 eV, is shown to be due to direct gap Gamma-valley transitions. This peak is independe nt of the layer thicknesses. The second peak, believed to be due to sp atially separated X-valley related transitions, depends on the layer t hicknesses. The X-valley transitions are mediated by scattering wave v ectors and are enhanced because of the closeness of the AlAs mole frac tion in our samples to the direct-indirect crossover composition. (C) 1996 American Vacuum Society.