HEAVY BE DOPING OF GAP AND INXGA1-XP

Authors
TAGARE MV CHIN TP WOODALL JM
Citation
Mv. Tagare et al., HEAVY BE DOPING OF GAP AND INXGA1-XP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2325-2326
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
3
Year of publication
1996
Pages
2325 - 2326
Database
ISI
SICI code
1071-1023(1996)14:3<2325:HBDOGA>2.0.ZU;2-H
Abstract
Very high p-type doping is achieved in Gap and InxGa1-xP with Be in so lid source molecular beam epitaxy equipped with a valved phosphorus cr acker. Dependence of hole concentration on the growth temperature and on the Be flux during growth is studied for Gap The hole concentration peaks at 3 x 10(19) cm(-3) for normal temperature (600 degrees C) gro wth. It is slightly higher at a lower growth temperature of 400 degree s C for the same Be flux. A higher hole concentration (5 x 10(19) cm(- 3)) is obtained by giving a high temperature rapid thermal anneal to t his sample. A hole concentration of 2 x 10(19) cm(-3) is achieved in I n0.49Ga0.51P by using a lower temperature growth (350 degrees C). To o ur knowledge, this is the highest reported hole concentration for any p-type dopant in In0.49Ga0.51P. (C) 1996 American Vacuum Society.