QUANTUM-CONFINED STARK-EFFECT NEAR 1.5-MU-M WAVELENGTH IN INAS0.53P0.47 GAYIN1-YP STRAIN-BALANCED QUANTUM-WELLS/

We report that high-quality InAsP/GaInP strain-balanced multiple quant um wells (MQWs) at 1.5 mu m wavelength can be grown by gas-source mole cular beam epitaxy. In order to obtain a large quantum-confined Stark effect, relatively thick (similar to 100 Angstrom) InAs0.53P0.47 layer s (lattice mismatch 1.8%) have been grown without strain relaxation. O ur theoretical calculation shows that, while fulfilling the strain bal ance condition, the GaInP barriers should have a large thickness and s mall strain to reduce strain relaxation in these layers. Large Stark s hift (32 meV at 180 kV/cm held) has been observed in a p-i-n diode str ucture with 20-period InAs0.53P0.47/Ga0.16In0.84P MQWs as the intrinsi c region. The large change of absorption coefficient under electric fi eld (similar to 3800 cm(-1) at 80 kV/cm) indicates that this material is very promising for optical modulators near 1.5 mu m. (C) 1996 Ameri can Vacuum Society.