NORMAL INCIDENCE INFRARED MODULATORS USING INTERSUBBAND TRANSITIONS IN INAS GASB/ALSB STEPPED QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/

Authors
DU Q ALPERIN J WANG WI
Citation
Q. Du et al., NORMAL INCIDENCE INFRARED MODULATORS USING INTERSUBBAND TRANSITIONS IN INAS GASB/ALSB STEPPED QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2343-2345
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
3
Year of publication
1996
Pages
2343 - 2345
Database
ISI
SICI code
1071-1023(1996)14:3<2343:NIIMUI>2.0.ZU;2-N
Abstract
Normal incidence infrared (3-5 mu m) modulators based on AlSb/InAs/Al0 .4Ga0.6Sb/GaSb/AlSb stepped quantum wells have been successfully grown on (100) GaSb substrates by molecular beam epitaxy, X-ray diffraction characterization showed sharp satellite peaks. The devices were fabri cated and measured using a Fourier transform infrared spectrometer at 77 K. The largest normal incidence infrared absorption coefficient (al pha) of 3200 cm(-1) at 5 mu m has been obtained at 14 V applied revers e bias. (C) 1996 American Vacuum Society.