MOLECULAR-BEAM EPITAXIAL-GROWTH AND PROPERTIES OF SHORT-WAVE INFRAREDHG0.3CD0.7TE FILMS

Hg1-xCdxTe films with cut-off wavelengths ranging from 1.25 to 1.65 mu m (at 300 K) in the short wave infrared band were prepared by molecul ar beam epitaxy. The structural perfection of the Hg1-xCdxTe films was strongly dependent on the degree of lattice matching provided by the substrate. First reports of in situ p-type doping of Hg1-xCdxTe (x app roximate to 0.7) alloys by molecular beam epitaxy is presented here. E lectron and hole concentration in excess of 1 x 10(17) cm(-3) were mea sured in In and As doped films, respectively. Analysis of variable tem perature Hall effect data assuming singly ionized impurities provided activation energies of 28.5 meV for As accepters, and 2.95 meV for In donors. (C) 1996 American Vacuum Society.