HETEROEPITAXY OF CDTE ON (211)SI USING CRYSTALLIZED AMORPHOUS ZNTE TEMPLATES

CdTe films were grown by molecular-beam epitaxy on As-passivated nomin al {211} Si substrates using thin interfacial ZnTe buffer layers. ZnTe layers were grown by the following two growth methods: (1) migration enhanced epitaxy (MEE) directly on Si and (2) MEE on 80 Angstrom templ ates of crystallized amorphous ZnTe buffers deposited directly on Si. CdTe films thicker than 8 mu m had threading dislocation densities in the range of 2.5 to 4 x 10(6) cm(-2) and 1 to 2 x 10(6) cm(-2) for met hods (1) and (2), respectively. Double crystal x-ray rocking curve pea k widths decreased from 550 to 120 arcsec as CdTe film thickness incre ased from 3 mu m to 9 mu m for samples grown by method (1), and for sa mples grown by method (2), peak widths decreased from 300 to 84 arcsec in the same thickness range. CdTe film grown on vicinal (211) Si subs trates misoriented by 5 degrees toward [111] with ZnTe buffer layer pr epared by method (2) had a dislocation density of 8 x 10(5) cm(-2) and an x-ray peak width of 72 arcsec. (C) 1996 American Vacuum Society.