IMPROVED LUMINESCENCE QUALITY WITH AN ASYMMETRIC CONFINEMENT POTENTIAL IN SI-BASED TYPE-II QUANTUM-WELLS GROWN ON A GRADED SIGE RELAXED BUFFER

Authors
FUKATSU S USAMI N SHIRAKI Y
Citation
S. Fukatsu et al., IMPROVED LUMINESCENCE QUALITY WITH AN ASYMMETRIC CONFINEMENT POTENTIAL IN SI-BASED TYPE-II QUANTUM-WELLS GROWN ON A GRADED SIGE RELAXED BUFFER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2387-2390
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
3
Year of publication
1996
Pages
2387 - 2390
Database
ISI
SICI code
1071-1023(1996)14:3<2387:ILQWAA>2.0.ZU;2-9
Abstract
A new class of Si-based quantum confined geometry is demonstrated usin g a combination of oppositely strained layers grown on a step-graded r elaxed SiGe buffer. The role of heterointerfaces is revealed as the co ntrolling mechanism of the exciton localization, which results in enha nced no-phonon transition intensity. (C) 1996 American Vacuum Society.