STEADY-STATE CHARACTERIZATION OF AN OPTICALLY CONTROLLED P-I-N-DIODE FOR LOW-FREQUENCY SWITCHING UNDER FRONT BACK ILLUMINATION/

Authors
SCHWARTZENBERG JW NWANKPA CO FISCHL R ROSEN A GILBERT DB RICHARDSON D
Citation
Jw. Schwartzenberg et al., STEADY-STATE CHARACTERIZATION OF AN OPTICALLY CONTROLLED P-I-N-DIODE FOR LOW-FREQUENCY SWITCHING UNDER FRONT BACK ILLUMINATION/, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1061-1065
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
7
Year of publication
1996
Pages
1061 - 1065
Database
ISI
SICI code
0018-9383(1996)43:7<1061:SCOAOC>2.0.ZU;2-Y
Abstract
This paper describes the determination of the steady state operating c haracteristics of an optically controlled Si p-i-n illuminated from ei ther top or bottom for varying electrode spacings and conducting layer thicknesses. Optically controlled p-i-n diodes have previously been u sed in both microwave and pulsed power applications and are now being considered for use in high-power, low-frequency (60 Hz) switching such as Static Var Compensators.