MODELING AND REALIZATION OF A HIGH-GAIN HOMOJUNCTION A-SI-H BULK BARRIER PHOTOTRANSISTOR

We report an extensive analysis of amorphous silicon bulk-barrier phot otransistors. Starting from a new analytical model for the device, we take into account the peculiarity of the material and, in particular, of the p-doped base, which we find to critically affect device operati on. We demonstrate the possibility of obtaining lightly p-doped materi al suitable for high-gain devices, and we use the equilibrium model of defects in amorphous silicon as a guideline for our work. Finally, me asurements on a number of high-gain devices verify our theoretical pre dictions.