QUANTUM EFFICIENCY ANALYSIS OF THIN-LAYER SILICON SOLAR-CELLS WITH BACK SURFACE FIELDS AND OPTICAL CONFINEMENT

Citation
R. Brendel et al., QUANTUM EFFICIENCY ANALYSIS OF THIN-LAYER SILICON SOLAR-CELLS WITH BACK SURFACE FIELDS AND OPTICAL CONFINEMENT, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1104-1113
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
43
Issue
7
Year of publication
1996
Pages
1104 - 1113
Database
ISI
SICI code
0018-9383(1996)43:7<1104:QEAOTS>2.0.ZU;2-0
Abstract
Thin-layer silicon solar cells utilize surface textures to increase li ght absorption and back surface fields to prevent recombination at the silicon-substrate interface. We present an analytical model for the i nternal quantum efficiency that accounts for light trapping and also c onsiders carrier generation and recombination in back surface fields o r substrates. We introduce a graphical representation of experimental data, the so-called Parameter-Confidence-Plot, which allows one to dra w maximum information on diffusion lengths and surface recombination v elocities from quantum efficiency measurements. The analysis is exempl ified for state of the art thin-layer silicon solar cells with and wit hout back surface fields.