MICROSTRUCTURE OF SINGLE-CRYSTALS OF INSE, GASE, GEAS, AND GEAS2

Authors
POPOV E ZAVRAZHNOV AY AVERBAKH EM NEKRASOV OV
Citation
E. Popov et al., MICROSTRUCTURE OF SINGLE-CRYSTALS OF INSE, GASE, GEAS, AND GEAS2, Inorganic materials, 32(6), 1996, pp. 586-588
Citations number
4
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
32
Issue
6
Year of publication
1996
Pages
586 - 588
Database
ISI
SICI code
0020-1685(1996)32:6<586:MOSOIG>2.0.ZU;2-S
Abstract
The microstructure of layered semiconductor single crystals was studie d by preferential chemical etching of cleaved surfaces. The faster dis solution of Li-intercalated GaSe and InSe as compared to the correspon ding pure selenides was observed, and the etch-pit density in the semi conductors examined was determined.