ELECTRICAL-PROPERTIES OF CONDUCTIVE IN2S3 AND IN2O3[S]FILMS PREPARED FROM THE IN(S2COC3H7-ISO)(3) VOLATILE PRECURSOR

Authors
BESSERGENEV VG IVANOVA EN KOVALEVSKAYA YA GROMILOV SA KIRICHENKO VN
Citation
Vg. Bessergenev et al., ELECTRICAL-PROPERTIES OF CONDUCTIVE IN2S3 AND IN2O3[S]FILMS PREPARED FROM THE IN(S2COC3H7-ISO)(3) VOLATILE PRECURSOR, Inorganic materials, 32(6), 1996, pp. 592-596
Citations number
10
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
32
Issue
6
Year of publication
1996
Pages
592 - 596
Database
ISI
SICI code
0020-1685(1996)32:6<592:EOCIAI>2.0.ZU;2-#
Abstract
Conductive indium oxide films were prepared by a two-step procedure in volving the deposition and oxidation of indium sulfide. In2S3 films we re deposited from the volatile chelate indium(III) isopropyl xanthate, In(S2COC3H7-iso)(3). Crystal structure and electrical properties of t he films were studied in the deposition-temperature range from 230 to 450 degrees C.