DOWNSTREAM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SINX-H FILMS FROM HEXAMETHYLCYCLOTRISILAZANE

SixN:H films were obtained from hexamethylcyclotrisilazane (HMCTSZN) b y downstream plasma-enhanced chemical vapor deposition (DPECVD), a new version of PECVD. The deposition rate was measured as a function of p rocess parameters in different plasma gases. It was shown that DPECVD with activated helium results in detachment of all organic groups and formation of carbon-free films. When ammonia gas was used at high pres sures (p > 10 Pa) and discharge powers (W > 300 W), a deposition mecha nism favorable for the desorption of organics from the substrate surfa ce was realized.